Method of improving adhesion between two dielectric films

ABSTRACT

A method of improving adhesion between layers in the formation of a semiconductor device and integrated circuit, and the resultant intermediate semiconductor structure, which include a substrate layer with a low k insulating layer thereover. The low k insulating layer includes a treated surface area of adsorbed gaseous particles. This treated surface area is formed by flowing a gas, preferably, silane, disilane, dichlorosilane, germane or combinations thereof, over a surface of the heated low k insulating layer for adsorption of such gaseous particles onto the heated surface, wherein the insulating layer maintains its original thickness. A capping layer is then deposited directly over the insulating layer wherein the treated surface area of the insulating layer significantly improves adhesion between the insulating layers and the capping layers to prevent delamination therebetween during subsequent processing steps of forming the integrated circuit.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to manufacturing of integrated circuits onsemiconductor substrates and, in particular, to a method of improvingadhesion between an insulating layer and a cap layer within suchintegrated circuits.

2. Description of Related Art

In semiconductor fabrication processes, layers of insulating, conductingand semiconductor materials are commonly deposited and patterned to formintegrated circuits (IC). These multilayer electronic components mayfurther be provided with contact vias and line wirings formed in theinsulating materials of such ICs, which, are referred to as interleveldielectrics (ILDs). Typically, ILDs are made by damascene and dualdamascene processing techniques.

In damascene processing, multilayer electronic components are made bydepositing a dielectric material on a surface of a substrate to form aninsulating layer and then patterning the insulating layer to formopenings for trenches therein such insulating layer. Once trenches areformed, a conductive material is deposited into the trenches and thenany excess conductive material may be removed from the structure surfaceto form damascene regions within the insulator layer.

Dual damascene processing similarly involves etching trenches within theinsulating layer of the IC and further etching vias at the bottom ofthese trenches. In ICs where contact vias also extend downwardly fromthe bottom of the trenches, both the trenches and the downwardlyextending vias are simultaneously filled with conductive material. Thisprocess forms both contact vias and integrated wires for interconnectingelectrical devices and wiring at various levels within the IC.

Thus, in the process of forming multilayer electronic components, usingboth damascene and dual damascene processes, several layers are requiredto form the contact vias and integrated wires. For example, a typicalmultilayer electronic component may be built up from a first insulatinglayer on a substrate by forming an opening therein and then filling theopening with a conductive fill material to form conductive lines.However, prior to metallization, a barrier layer is typically providedwithin the openings in the first insulating layer to avoid metaldiffusion between the conductive fill and the first insulating layer.

A second insulating layer is deposited over the first insulating layerand the metallization. Trenches and contact vias are then formed in thissecond insulating layer to form the line wirings and contact vias of themultilayer electronic component. Again, prior to metallization, abarrier layer may be deposited into the trenches and vias so as to coatthe sidewalls of the openings in order to prevent any metal diffusion.The trenches and vias are then filled with metallization and the surfacearea of the substrate planarized, such as, by chemical mechanicalpolishing.

However, during the polishing process, the barrier layer may delaminatefrom the insulating layer resulting in interruption of polishing processas well as damage to the multilayer electronic component. Thisdelamination problem is particularly severe in those devices having lowk dielectric constant insulating layers. One method to decrease theproblem of delamination between low k dielectric constant insulatinglayers and barrier layers has been to deposit a cap layer between theinsulating layer and the barrier layer. However, the use of cap layersis ineffective as delamination occurs between the insulating and caplayers, and in particular, between low k dielectric constant insulatinglayers and cap layers.

Therefore, a need exists in the art for preventing delamination betweeninsulating layers and cap layers, particularly, those insulating and caplayers used in single and dual damascene processes.

SUMMARY OF THE INVENTION

Bearing in mind the problems and deficiencies of the prior art, it istherefore an object of the present invention to provide a method forpreventing delamination between insulating layers and cap layers.

Another aspect of the invention is to provide a method for providingimproved adhesion between insulating layers, preferably low k dielectricconstant insulating layers, and cap layers in single and dual damasceneprocesses.

It is another object of the present invention to provide uniquelymodified damascene and dual damascene processes for fabricatingmultilayer electronic components.

Yet another aspect of the invention is to provide multilayer electroniccomponents made using the method of the invention.

Still other objects and advantages of the invention will in part beobvious and will in part be apparent from the specification.

The above and other objects, which will be apparent to those skilled inthe art, are achieved in the present invention, which, is directed to ina first aspect a method of improving adhesion between an insulatinglayer and a capping layer in a process for making electronic components.

The method includes providing an integrated circuit structure which isin the process of being fabricated into a finished electronic componenthaving an insulating layer. An exposed surface of the insulating layeris contacted with a gas for adsorption of such gas onto the exposedsurface to form a treated surface area of the insulating layer whilesimultaneously maintaining an original thickness of the insulatinglayer. A capping layer is deposited over the treated surface area andthen the process of making the integrated circuit device continues,wherein the treated surface area improves adhesion between theinsulating layers and the capping layer to prevent delaminationtherebetween during these subsequent processing steps.

Preferably, the insulating layer has a thickness ranging from about2,000 Å to about 10,000 Å, and comprises a low k dielectric, such as,organo silicate glass, polyimide, organic siloxane polymer, polyaryleneether, nano-porous silica, hydrogen silesquioxane glass and methylsilesquioxane glass.

In this first aspect, the gas is preferably silane, disilane,dichlorosilane, germane and combinations thereof, whereby the adsorbedgaseous particles may include molecules, radicals, derivatives andcombinations thereof. In adsorption of such gaseous particles onto thesurface of the insulating layer, it is critical that the insulatinglayer and substrate be heated, preferably to a temperature ranging fromabout 100° C. to about 500° C. and then the gas is flown over theseheated surfaces for adsorption thereon. This may be accomplished at apressure ranging from about 0.5 Torr to about 10 Torr and for a durationof about 50 sccm to about 500 sccm.

In a second aspect, the invention is directed to a method of forming asemiconductor device by providing a substrate layer, depositing aninsulating layer thereon and then heating the substrate layer and theinsulating layer. Once heated, the treatment gas is flown over a surfaceof the heated insulating layer.

In so doing, this treatment gas contacts the heated surface foradsorption of the gas onto the surface of the insulating layer to form atreated surface area thereof while maintaining an original thickness ofthe insulating layer. A capping layer is then deposited directly overthe insulating layer wherein the treated surface area of the insulatinglayer improves adhesion between the insulating and the capping layers toprevent delamination therebetween during subsequent processing steps.

In a third aspect, the invention is directed to an intermediatesemiconductor structure. This intermediate semiconductor structureincludes a substrate layer, an insulator layer disposed over thesubstrate layer having a treated surface area comprising adsorbedgaseous particles and a capping layer disposed over the treated surfacearea of the insulator layer. In accordance with the invention, thetreated surface area of this intermediate structure advantageouslyprevents any delamination between the insulator layer and the cappinglayer.

BRIEF DESCRIPTION OF THE DRAWINGS

The features of the invention believed to be novel and the elementscharacteristic of the invention are set forth with particularity in theappended claims. The figures are for illustration purposes only and arenot drawn to scale. The invention itself, however, both as toorganization and method of operation, may best be understood byreference to the detailed description which follows taken in conjunctionwith the accompanying drawings in which:

FIG. 1 is a cross-sectional view of a substrate processed in accordancewith the invention having a treated surface area of an insulating layer.

FIG. 2 is a cross-sectional view of the structure of FIG. 1 showing thestep of forming openings in a mask over a surface of a capping layer.

FIG. 3 is a cross-sectional view of the structure of FIG. 2 showing thestep of transferring the openings of the mask into the underlyingstructure to form openings therein with exposed surfaces of a dielectriclayer.

FIG. 4 is a cross-sectional view showing the step of removing the maskof FIGS. 3 and 4.

FIG. 5 is a cross-sectional view of the structure of FIG. 4 showing thestep of filling the openings with a photo resist material.

FIG. 6 is a cross-sectional view of the structure of FIG. 5 showing thestep of recessing back the photo resist material to form a photo resistplug within each of the openings in the structure.

FIG. 7 is a cross-sectional view of the step of forming a second maskover the structure of FIG. 6 for forming trenches within suchintermediate semiconductor structure.

FIG. 8 is a cross-sectional view of the step of forming such trencheswithin such intermediate semiconductor structure of FIG. 7.

FIG. 9 is a cross-sectional view of the structure of FIG. 8 showing thestep of removing the second mask, the photo resist plug within each via,as well as the exposed dielectric layer within each via.

FIG. 10 is a cross-sectional view showing the step of formingmetallization layers within the trenches and vias of the structure ofFIG. 9.

FIG. 11 is a cross-sectional view showing the step of planarizing thestructure of FIG. 10 whereby in accordance with the invention thetreated surface area of the insulating layer significantly prevents anydelamination from occurring between such insulating layer and a cappinglayer directly thereover.

DESCRIPTION OF THE PREFERRED EMBODIMENT(S)

In describing the preferred embodiment of the present invention,reference will be made herein to FIGS. 1–11 of the drawings in whichlike numerals refer to like features of the invention.

The present invention overcomes problems of delamination between acapping layer and an insulating layer in fabrication of a semiconductordevice. Advantageously, the invention provides a method of forming asemiconductor device, and the semiconductor device fabricated using suchmethod, that significantly improves adhesion between capping andinsulator layers, which in turn, prevents any delamination fromoccurring between such layers during further processing of thesemiconductor device, particularly during subsequent planarizationprocesses. These steps may be repeated a number of times on thesubstrate to complete the fabrication of the semiconductor device. Theinvention will be better understood with reference to the drawings.

Referring to FIG. 1, a substrate 10 is provided, which, preferablyincludes insulator regions 12 of a known insulator material and metalregions 14 fabricated by known techniques. The substrate 10 may compriseany known substrate material including, but not limited to, Si₃N₄, SiC,low k dielectric SiO₂, doped SiO₂. A first dielectric layer 20 is thendeposited directly over the substrate 10. This first dielectric layer 20may include a material, such as a low k dielectric constant interleveldielectric material, SiC, SiN and the like, deposited to a thicknessranging from about 300 Å to about 800 Å by known techniques.

Next, an insulating layer 30 is deposited directly over the firstdielectric layer 20 to a thickness ranging from about 2000 Å to about10,000 Å also by known techniques. In accordance with the invention, theinsulating layer 30 preferably comprises any known low k dielectricmaterial including, but not limited to, CORAL™ of Novellus Systems,Inc., BLACK DIAMOND™ of Applied Materials, Inc., SiLK™ of Dow Corning,Inc., NANOGLASS ™ of Nanopore, Inc, and the like. Other low k dielectricmaterials used to form insulating layer 30 may include, for example,organo silicate glass, polyimide, organic siloxane polymer, polyaryleneether, methyle hydrogen, nano-porous silica, hydrogen silesquioxaneglass and methyl silesquioxane glass.

Once the insulating layer 30 is deposited on the first dielectric layer20, the surface area of insulating layer 30 is treated to form a treatedsurface area 35 of insulating layer 30 for improving adhesion betweensuch insulating layer 30 and a subsequently deposited capping layer 40.

In forming the treated surface area 35 of insulating layer 30, once theinsulating layer 30 is deposited, the structure is treated in a gaseousenvironment, within a treatment chamber, at an elevated temperature fora duration sufficient for adsorption of such gas particles, radicals, orderivatives thereof onto the exposed surface areas of the insulatinglayer 30. Preferably, the insulating layer 30 is treated in chemicalvapor deposition chamber. In accordance with the invention, thetreatment gas is continually flown into the treatment chamber over theexposed surface areas of insulating layer 30 during the formation oftreated surface area 35. In so doing, the treated surface area 35 isformed only at exposed surface areas of insulating layer 30 whereby theinsulating layer 30 maintains its original thickness. This, is acritical feature of the invention as the treated surface area 35 ofinsulating layer 30 improves adhesion between such insulating layer 30and a subsequently deposited capping layer without requiring anyadditional height or architecture to the structure 10, 20, 30;particularly to insulating layer 30.

In more detail, in treating the insulating layer 30, the treatmentchamber is preferably preheated and maintained at a temperature rangingfrom about 100° C. to about 500° C. The substrate having the insulatinglayer thereover is then provided within the preheated chamber and alsoheated to a predetermined temperature ranging from about 100° C. toabout 500° C., preferably at about 400° C. The substrate 10, 20 havinginsulating layer 30, preferably of a low k dielectric insulatingmaterial, is maintained at this temperature during the formation of thetreated surface area 35.

Once the structure is maintained at the predetermined temperature, thetreatment gas is flown into the treatment chamber at a pressure rangingfrom about 0.5 Torr to about 10 Torr over the insulating layer 30 whilemaintaining the structure at the predetermined temperature. Thetreatment gas preferably comprises a silane-based or germanium-basedgas, such as, silane, disilane, dichlorosilane, germane, andcombinations thereof. In accordance with the invention, it is criticalthat the treatment gas be a reactive in nature, such as, those used forfilm depositions.

In the preferred embodiment the treatment gas comprises silane gas flownover surfaces of a low k insulating layer 30. The gas is continuallyflown into the treatment chamber over the insulating layer 30 for asufficient duration that allows the adsorption of the gaseous particles,radicals or derivatives onto the exposed surfaces of insulating layer 30to form the treated surface area 35. Preferably, the gas is continuallyflown into the treatment chamber over exposed surfaces of insulatinglayer 30 for a time ranging from about 50 sccm to about 500 sccm.

Subsequently, the adsorbed gaseous particles, molecules, radicals orderivatives of the treated surface area 35 may then optionally undergoan oxidation or carbonization process. This may be accomplished byflowing an oxygen-based gas or carbon-based gas including, but notlimited to, CH₄, CO₂, O₂ or combinations thereof, over the treatedsurface area 35 in order to oxidize and/or carbonize the adsorbed gasesof the treated surface area 35. The nitridization or carbonizationprocess can be performed using a plasma process with a power in therange of about 100 W to about 1000 W.

Once the treated surface area 35 of insulating layer 30 is formed, andoptionally oxidized and/or carbonized, a capping layer 40 is provideddirectly and entirely over this treated surface area 35, whereby thetreated surface area 35 of the invention significantly improves adhesionbetween it and the capping layer 40. The capping layer 40 may comprise amaterial including, but not limited to, silicon oxide, silicon carbide,silicon nitride, and the like, deposited by known techniques to athickness ranging from about 2 nm to about 100 nm.

Referring to FIG. 2, once the capping layer 40 is deposited over thetreated surface 35 of insulating layer 30 the structure is furtherprocessed, wherein during such subsequent processing steps the improvedadhesion between the insulating layer 30 and the capping layer 40 as aresult of treated surface area 35 substantially prevents anydelamination from occurring between such layers during these furtherprocessing steps.

In accordance with the invention, the semiconductor device is furtherprocessed by forming mask 50 over a surface of capping layer 40 by aknown technique. As shown in FIG. 2, the mask 50 is patterned andexposed, preferably via lithography, to form openings 52 therein mask50. Referring to the dashed lines 54 in FIG. 2, the openings 52 of mask50 are then transferred into the underlying substrate.

Referring to FIGS. 3 and 4, openings 52 of mask 50 are transferred intothe underlying structure by etching through correlating regions ofsequentially exposed capping layer 40, treated area 35 and theinsulating layer 30, stopping at a top surface of the first dielectriclayer 20 to form openings 60. Remaining portions of mask 50 are thenremoved, preferably by a photo resist dry stripping technique, to exposea top surface of the capping layer 40 as shown in FIG. 4. The exposedsurface areas of this resultant structure as shown in FIG. 4 are thencleaned, preferably via a wet clean technique.

Once the surfaces of the intermediate structure are cleaned, a photoresist layer 70 is deposited over the structure surface in an amountsufficient to at least fill the openings 60 as shown in FIG. 5.Preferably, the photo resist layer 70 may be deposited by an I-lineresist coating technique. The photo resist layer 70 is then etched backto a sufficient depth so as to leave remaining portions of photo resistlayer within openings or vias 60. Referring to FIG. 6, the photo resistlayer 70 is preferably etched back so as to leave remaining photo resistplugs 72 within vias 60 whereby the capping layer 40 remains exposed ata surface of this resultant intermediate structure. This may beaccomplished by an I-line resist etch technique.

The structure of FIG. 6 may be further processed in accordance with thepresent dual damascene processing technique. In so doing, a second mask80 is formed over the structure as shown in FIG. 6 by initiallydepositing a photo resist material over the surface followed bypatterning and exposing such resist layer, preferably via lithography,to form openings 82 as shown in FIG. 7.

Openings 82 are used to form trenches within the semiconductorstructure. In so doing, the openings 82 are formed directly overlocations of openings 60. In accordance with the invention, theseopenings 82 may be the same size as openings 60, or alternatively asshown in FIG. 7, these openings 82 may be larger in dimension incomparison to openings 60. As shown by the dashed lines in FIG. 7, theopenings 82 are transferred into the remaining portions of underlyingcapping layer 40, treated surface 35 and insulating layer 30 by etchingthere-through such layers stopping at a distance within the insulatinglayer 30 as shown in FIG. 8. This may be accomplished by line etchingthese layers to a depth ranging from about 2,000 Å to about 5,000 Å.

Referring to FIG. 9, once openings 82 are transferred into theunderlying structure, the second mask 80 is removed, preferably by aphoto resist dry strip process, therein exposing a top surface of thecapping layer 40 and removing any photo resist plug 72 remaining withinvias 60, as well as any subsequently exposed regions of the firstdielectric layer 20 at the bottom of vias 60. The resultant structure iscleaned, preferably via a wet clean process, to form trench 85 openingsoverlying via 65 openings and having exposed regions of the metal region14 of the substrate 10. Subsequently, the structure of FIG. 9 may beprovided with metallization layers whereby the treated surface area 35prevents delamination between the insulating layer 30 and the cappinglayer 40 during such processing steps.

Referring to FIG. 10, the exposed surfaces of the structure are cleanedand then a barrier layer 92 is deposited entirely over all exposedsurfaces of the structure whereby the barrier layer 92 directly contactsthe exposed metal portions 14 of the substrate at the bottom of via 65openings. The barrier layer may include a known refractory metal (Ta,Ti, W), refractory metal nitrides (TaN, TiN, WN), refractory metalalloys (TaSiN), or combinations thereof deposited to a thickness ofabout 2 nm to about 100 nm by known techniques, such as, by physicalvapor deposition. Once the barrier layer 92 is deposited, a seed layer94 may be deposited directly and entirely over the barrier layer 92. Theseed layer 94 may comprise a copper seed layer also deposited to athickness ranging from about 500 Å to about 2000 Å by known techniques,such as, sputtering and chemical vapor deposition.

After the barrier layer 92 and the seed layers 94 are deposited,remaining portions within vias 65 and trenches 85 are filled with aconductive material 96. The conductive material of this metallizationlayer 96 may comprise a metal. Preferably, the metallization layer is acopper electrofill layer, which once deposited, is subjected to a knownannealing technique.

Upon completion of deposition of the metallization layer 96, the surfaceof the structure of FIG. 10 is planarized whereby the capping layer 40may be removed, may be partially removed, or alternatively may remain onthe surface of the substrate. This planarization step forms conductivefeatures 100 that isolated from adjacent conductive features viainsulating layer 30. The planarization may be accomplished by knownchemical mechanical polishing techniques such as, for example, anabrasive-free polishing technique. Subsequently, the seed layer and thebarrier layers are planarized to expose surfaces of the capping layer 40as shown in FIG. 11. This too may be accomplished by known chemicalmechanical polishing techniques. During this planarization process, acritical feature of the invention is that the treated surface area 35 ofthe low k insulating layer 30 substantially prevents any delaminationfrom occurring between such low k dielectric constant insulating layer30 and the overlying capping layer 40.

As will be understood in accordance with the invention, the instantmethod may be used to form a variety of semiconductor surfaces requiringstrong adhesion between an insulating layer, particularly a low kdielectric insulating layer, and an overlying capping layer,particularly an oxide layer. These semiconductor surfaces include, butare not limited to, planarized multi-level metal interconnectstructures, planarized shallow trench isolation structures, planarizedsemiconductor islands, and a variety of other surfaces as known and usedin the art.

For example, the invention is useful in fabricating integrated circuitsthat require the use of a trench etch stop layer. In these circuits, afirst dielectric layer is deposited over the substrate. Exposed surfaceareas of this first dielectric layer are then provided with the treatedsurface area of the invention by flowing a gas over the surface foradsorption of such gaseous particles onto the exposed surfaces of thefirst dielectric. After this treatment step, an etch stop layer isdirectly deposited over the treated surface area of the insulatingdielectric layer whereby the treated surface improves adhesion betweenthe etch stop layer and the treated first dielectric layer. The etchstop layer may comprise a trench etch stop layer comprising a materialincluding but not limited to a SiN, SiC and the like.

Subsequently, exposed surface areas of the etch stop layer may alsoundergo the treatment process of the invention to form treated surfaceareas of the etch stop for improving adhesion between such etch stoplayer and a subsequently deposited second dielectric layer. The improvedadhesion is a result of the adsorbed gaseous particles on the surface ofthe etch stop layer. This second dielectric layer over the etch stoplayer may also be subjected to the treatment process of the invention toform adsorbed gaseous particles on the surface of the second dielectriclayer. These adsorbed gaseous particles on the second dielectric layerimprove adhesion between this second dielectric layer and a subsequentlydeposited capping layer.

Thus, in accordance with the present invention, an essential feature isthat the treated surface area 35 comprising adsorbed gaseous particleson surfaces of the insulating layer significantly improves adhesionbetween such insulating layer and another layer deposited directly overthe treated surface area, which in turn, eliminates delamination fromoccurring between such layers during further processing of theintegrated circuit, particularly during planarization processes.

While the present invention has been particularly described, inconjunction with a specific preferred embodiment, it is evident thatmany alternatives, modifications and variations will be apparent tothose skilled in the art in light of the foregoing description. It istherefore contemplated that the appended claims will embrace any suchalternatives, modifications and variations as falling within the truescope and spirit of the present invention.

1. A method of improving adhesion between an insulating layer and acapping layer in a process for making electronic components comprising:providing an integrated circuit structure which is in the process ofbeing fabricated into a finished electronic component having aninsulating layer; contacting an exposed surface of said insulating layerwith a gas selected from the group consisting of silane, disilane,dichlorosilane, germane and combinations thereof for adsorption of saidgas onto said exposed surface of said insulating layer to form a treatedsurface area of said insulating layer while maintaining an originalthickness of said insulating layer; depositing a capping layer directlyover said treated surface area of said insulating layer; and continuingthe process for making the integrated circuit device, wherein saidtreated surface area of said insulating layer improves adhesion betweensaid insulating layer and said capping layer to prevent delaminationtherebetween during said step of continuing the process for making theintegrated circuit device.
 2. The method of claim 1 wherein saidinsulating layer has a thickness ranging from about 2,000 Å to about10,000 Å.
 3. The method of claim 1 wherein said insulating layercomprises a low k dielectric.
 4. The method of claim 3 wherein said lowk dielectric comprises a material selected from the group consisting oforgano silicate glass, polyimide, organic siloxane polymer, polyaryleneether, methyl hydrogen, nano-porous silica, hydrogen silesquioxane glassand methyl silesquioxane glass.
 5. The method of claim 1 wherein saidadsorbed gaseous particles selected from the group consisting ofmolecules, radicals, derivatives and combinations thereof of said gasare adsorbed onto said exposed surface of said insulating layer to formsaid treated surface area.
 6. The method of claim 5 wherein saidadsorbed gaseous particles are adsorbed onto said exposed surface ofsaid insulating layer by heating said integrated circuit having saidinsulting layer to a temperature ranging from about 100° C. to about500° C. and then flowing said gas over said exposed surface of saidheated insulating layer.
 7. The method of claim 6 wherein said gas isflown over said exposed surface of said heated insulating layer at apressure ranging from about 0.5 Torr to about 10 Torr for a duration ofabout 50 sccm to about 500 sccm.
 8. A method of forming a semiconductordevice comprising: providing a substrate layer; depositing an insulatinglayer over said substrate layer; heating said substrate layer and saidinsulating layer; flowing a treatment gas selected from the groupconsisting of silane, disilane, dichlorosilane, germane and combinationsthereof over a surface of said heated insulating layer; contacting saidsurface of said heated insulating layer with said treatment gas foradsorption of said gas onto said surface of said insulating layer toform a treated surface area of said insulating layer while maintainingan original thickness of said insulating layer; and depositing a cappinglayer directly over said insulating layer wherein said treated surfacearea of said insulating layer improves adhesion between said insulatingand said capping layers to prevent delamination therebetween duringsubsequent processing steps.
 9. The method of claim 8 further includingthe step of depositing a dielectric layer over said substrate layerfollowed by depositing said insulating layer over said dielectric layer.10. The method of claim 9 wherein said dielectric layer is deposited toa thickness ranging from about 300 Å to about 800 Å.
 11. The method ofclaim 8 wherein said insulating layer comprises a low k dielectricselected from the group consisting of organo silicate glass, polyimide,organic siloxane polymer, polyarylene ether, methyl hydrogen,nano-porous silica, hydrogen silesquioxane glass and methylsilesquioxane glass.
 12. The method of claim 11 wherein said insulatinglayer is deposited to a thickness ranging from about 2,000 Å to about10,000 Å.
 13. The method of claim 8 wherein said substrate layer andsaid insulating layer are heated and maintained at a temperature rangingfrom about 100° C. to about 500° C.
 14. The method of claim 8 whereinsaid adsorption of said gas onto said surface of said insulating layercomprises adsorbed gas particles selected from the group consisting ofgaseous molecules, radicals, derivatives thereof and combinationsthereof.
 15. The method of claim 8 wherein said treatment gas is flownover said surface of said heated insulating layer at a pressure rangingfrom about 0.5 Torr to about 10 Torr.
 16. The method of claim 15 whereinsaid treatment gas is flown over said surface of said heated insulatinglayer for a duration of about 50 sccm to about 500 sccm.
 17. The methodof claim 8 wherein said capping layer is selected from the groupconsisting of silicon oxide, silicon carbide and silicon nitride. 18.The method of claim 8 wherein said subsequent processing steps, furtherincluding the steps of: forming a first set of openings in a first maskdeposited over said capping layer; transferring said first set ofopenings into said insulator layer to form via openings in saidinsulator layer; depositing photo resist in an amount sufficient to atleast fill said via openings in said insulator layer; and etching backsaid photo resist so as to leave remaining portions of said photo resistonly within said via openings to form photo resist plugs in saidinsulator layer.
 19. The method of claim 18 further including thesubsequent steps of: forming a second set of openings in a seconddeposited mask directly over said via openings; transferring said secondset of openings into said insulator layer to form trench openings oversaid via openings in said insulator layer; removing said photo resistplugs to expose a metal region of said substrate layer; depositing ametallization layer in an amount sufficient to at least fill said viaopenings and said trench openings; and planarizing a surface of thesemiconductor device wherein said treated surface area of said insultinglayer prevents delamination between said insulating layer and saidcapping layer.
 20. A method of forming a semiconductor devicecomprising: providing a substrate layer; depositing an insulating layerover said substrate layer; heating said substrate layer and saidinsulating layer; flowing a treatment gas over a surface of said heatedinsulating layer; contacting said surface of said heated insulatinglayer with said treatment gas for adsorption of said gas onto saidsurface of said insulating layer to form a treated surface area of saidinsulating layer while maintaining an original thickness of saidinsulating layer; oxidizing said treated surface area of said insulatinglayer; and depositing a capping layer directly over said insulatinglayer wherein said treated surface area of said insulating layerimproves adhesion between said insulating and said capping layers toprevent delamination therebetween during subsequent processing steps.21. The method of claim 20 wherein said treatment gas is a silane-basedgas.
 22. The method of claim 20 wherein said treatment gas is agermanium-based gas.
 23. A method of forming a semiconductor devicecomprising: providing a substrate layer; depositing an insulating layerover said substrate layer; heating said substrate layer and saidinsulating layer; flowing a treatment gas over a surface of said heatedinsulating layer; contacting said surface of said heated insulatinglayer with said treatment gas for adsorption of said gas onto saidsurface of said insulating layer to form a treated surface area of saidinsulating layer while maintaining an original thickness of saidinsulating layer; carbonizing said treated surface area of saidinsulating layer; and depositing a capping layer directly over saidinsulating layer wherein said treated surface area of said insulatinglayer improves adhesion between said insulating and said capping layersto prevent delamination therebetween during subsequent processing steps.24. The method of claim 23 wherein said treatment gas is a silane-basedgas.
 25. The method of claim 23 wherein said treatment gas is agermanium-based gas.